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CMPD2004 Datasheet(PDF) 1 Page - Central Semiconductor Corp

No. de Pieza. CMPD2004
Descripción  SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
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Fabricante  CENTRAL [Central Semiconductor Corp]
Página de inicio  http://www.centralsemi.com
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CMPD2004 Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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CMPD2003
CMPD2004
CMPD2003C
CMPD2004A
CMPD2003S
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R7 (6-August 2003)
DESCRIPTION:
The Central Semiconductor CMPD2003,
CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004A, CMPD2004C and CMPD2004S
types are silicon switching diodes manufactured
by the epitaxial planar process, designed for
applications requiring high voltage
capability.
The following configurations are available:
CMPD2003
SINGLE
MARKING CODE: A82
CMPD2003C
DUAL, COMMON CATHODE
MARKING CODE: C3C
CMPD2003S
DUAL, IN SERIES
MARKING CODE: C3S
CMPD2004
SINGLE
MARKING CODE: D53
CMPD2004A
DUAL, COMMON ANODE
MARKING CODE: DB8
CMPD2004C
DUAL, COMMON CATHODE
MARKING CODE: DB7
CMPD2004S
DUAL, IN SERIES
MARKING CODE: DB6
MAXIMUM RATINGS: (TA=25°C)
CMPD2004
CMPD2003
CMPD2004A
CMPD2003C
CMPD2004C
SYMBOL
CMPD2003S
CMPD2004S
UNITS
Continuous Reverse Voltage
VR
200
240
V
Peak Repetitive Reverse Voltage
VRRM
250
300
V
Peak Repetitive Reverse Current
IO
200
200
mA
Continous Forward Current
IF
250
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1.0 µs
IFSM
4.0
A
Forward Surge Current, tp=1.0 s
IFSM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W


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