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H7N0608LD Datasheet(PDF) 3 Page - Renesas Technology Corp

No. de Pieza. H7N0608LD
Descripción  Silicon N Channel MOS FET High Speed Power Switching
Descarga  12 Pages
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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H7N0608LD Datasheet(HTML) 3 Page - Renesas Technology Corp

 
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H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 3 of 11
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown Voltage V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
——
±10
µAVGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
——10
µAVDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
2.5
V
ID = 1 mA, VDS = 10 V
Note1
Static drain to source on state
RDS(on)
—6.0
8.0
m
ID = 35 A, VGS = 10 V
Note1
resistance
8.0
12
m
ID = 35 A, VGS = 4.5 V
Note1
Forward transfer admittance
|yfs|
4575—
S
ID = 35 A, VGS = 10 V
Note1
Input capacitance
Ciss
6200
pF
VDS = 10 V
Output capacitance
Coss
680
pF
VGS = 0
Reverse transfer capacitance
Crss
350
pF
f = 1 MHz
Total gate charge
Qg
100
nC
VDD = 25 V
Gate to source charge
Qgs
20
nC
VGS = 10 V
Gate to drain charge
Qgd
20
nC
ID = 70 A
Turn-on delay time
td(on)
—45
ns
VGS = 10 V, ID = 35 A
Rise time
tr
220
ns
RL = 0.86
Turn-off delay time
td(off)
125
ns
Rg = 4.7
Fall time
tf
—35
ns
Body–drain diode forward voltage VDF
—0.94
V
IF = 70 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—40
ns
IF = 70 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 1. Pulse test


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