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BU4506DX Datasheet(PDF) 3 Page - NXP Semiconductors |
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BU4506DX Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX Fig.1. Switching times waveforms (16 kHz). Fig.2. Switching times definitions. Fig.3. Definition of anti-parallel diode V fr and tfr. Fig.4. Switching times test circuit. Fig.5. High and low DC current gain. Fig.6. High and low DC current gain. IC IB VCE ICsat IB1 64us 26us 20us t t t TRANSISTOR DIODE IB2 + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe ICsat 90 % 10 % tf ts IB1 IC IB t t - IB2 0.01 0.1 1 10 1 10 100 IC / A hFE BU4506DF/X/Z VCE = 1V Ths = 25 C Ths = 85 C time time V F V fr V F I F fr t 10% 5 V I F 0.01 0.1 1 10 1 10 100 IC / A hFE VCE = 5V BU4506DF/X/Z Ths = 25 C Ths = 85 C January 1999 3 Rev 1.000 |
Número de pieza similar - BU4506DX |
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Descripción similar - BU4506DX |
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