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BUJ103A Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BUJ103A
Descripción Electrónicos  Silicon Diffused Power Transistor
Download  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ103A Datasheet(HTML) 5 Page - NXP Semiconductors

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August 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103A
Fig.7. Normalised power dissipation.
PD% = 100
⋅PD/PD
25˚C = f (Tmb)
Fig.8. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IB); Tj=25˚C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat = f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
IC/A
VBEsat/V
0.01
1
100
10
1
0.1
10
h FE
IC / A
Tj = 25 C
1V
5V
0.0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
IC/A
VCEsat/V
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t p
T
T
P
t
D
tp
D=


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