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2N60-TN3-T Datasheet(PDF) 6 Page - Unisonic Technologies |
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2N60-TN3-T Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-053,E TYPICAL CHARACTERISTICS 10 0 10-1 10 -2 10 1 10-1 100 Drain-Source Voltage, VDS (V) V GS Top: 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm : 5.5V 10 0 10 -1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 -20℃ 85℃ 25℃ 250μs Pulse Test TC=25℃ On-Region Characteristics VDS=50V 250μs Pulse Test 0 0 Drain Current, ID (A) 1 2 VGS=10V VGS=20V 2 4 8 10 12 On-Resistance Variation vs. Drain Current and Gate Voltage 6 34 56 TJ=25℃ 10 0 10 -1 0.2 Source-Drain Voltage, VSD (V) Body Diode Forward Voltage Variationvs. Source Current and Temperature 1.6 25℃ 0.4 0.6 0.8 1.0 1.2 1.4 125℃ VGS=0V 250μs Pulse Test 500 0 10 -1 Drain-Source Voltage, VDS (V) Capacitancevs. Drain-Source Voltage 400 100 100 101 Crss Coss Ciss=CGS+CGD (CDS=shorted) Coss=CDS+CGD Crss=CGD Ciss VGS=0V f = 1MHz 300 200 0 Total Gate Charge, QG (nC) 2 61 0 ID=2.4A 8 10 12 Gate Charge vs. Gate Charge Voltage 4 6 4 2 0 VDS=120V VDS=300V VDS=480V 8 |
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