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2N60L-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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2N60L-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page 2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-053,E ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Switching Characteristics Turn-On Delay Time tD (ON) 10 30 ns Rise Time tR 25 60 ns Turn-Off Delay Time tD(OFF) 20 50 ns Fall Time tF VDD =300V, ID =2.4A, RG=25Ω (Note 1,2) 25 60 ns Total Gate Charge QG 9.0 11 nC Gate-Source Charge QGS 1.6 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Reverse Recovery Time tRR 180 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 2. Essentially Independent of Operating Temperature |
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