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2N60L-TM3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N60L-TM3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-053,E ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A TC = 25°C 2.0 A Drain Current Continuous TC = 100°C ID 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25°C 45 W Total Power Dissipation Derate above 25°C PD 0.36 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-251 112 TO-252 112 TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA 54 TO-251 12 TO-252 12 TO-220 4 Thermal Resistance Junction-Case TO-220F θJc 4 ℃ /W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 V VDS = 600V, VGS = 0V 10 µA Zero Gate Voltage Drain Current IDSS VDS = 480V, TC = 125°C 100 µA Forward VGS = 30V, VDS = 0V 100 nA Gate-Body Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/ T △ J ID = 250 µA 0.4 V/℃ On Characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID =1A 3.8 5 Ω Forward Transconductance gFS VDS = 50V, ID = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance CISS 270 350 pF Output Capacitance COSS 40 50 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1MHz 5 7 pF |
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