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IRGP4068DPBF Datasheet(PDF) 2 Page - International Rectifier

No. de Pieza. IRGP4068DPBF
Descripción  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Descarga  10 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
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IRGP4068DPBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRGP4068DPbF/IRGP4068D-EPbF
2
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Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V
(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
——V
VGE = 0V, IC = 100µA
e
CT6
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—0.30—
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
CT6
—1.65
2.14
IC = 48A, VGE = 15V, TJ = 25°C
4,5,6
VCE(on)
Collector-to-Emitter Saturation Voltage
2.0
V
IC = 48A, VGE = 15V, TJ = 150°C
8,9,10
—2.05—
IC = 48A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0
6.5
V
VCE = VGE, IC = 1.4mA
8,9
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
-21
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
10,11
gfe
Forward Transconductance
32
S
VCE = 50V, IC = 48A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
1.0
150
µA
VGE = 0V, VCE = 600V
450
1000
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
0.96
1.05
V
IF = 8.0A
7
—0.81
0.86
IF = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Ref.Fig
Qg
Total Gate Charge (turn-on)
95
140
IC = 48A
18
Qge
Gate-to-Emitter Charge (turn-on)
28
42
nC VGE = 15V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
35
53
VCC = 400V
IC = 48A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
1275
1481
µJ
RG = 10Ω, L = 200µH,TJ = 25°C
CT4
Energy losses include tail
td(off)
Turn-Off delay time
145
176
µJ
IC = 48A, VCC = 400V, VGE = 15V
tf
Fall time
35
46
RG = 10Ω, L = 200µH,TJ = 25°C
IC = 48A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
1585
µJ
RG = 10Ω, L = 200µH,TJ = 175°C
CT4
Energy losses include tail
td(off)
Turn-Off delay time
165
µJ
IC = 48A, VCC = 400V, VGE = 15V
WF1
tf
Fall time
45
RG=10Ω, L=200µH, TJ = 175°C
Cies
Input Capacitance
3025
VGE = 0V
17
Coes
Output Capacitance
245
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
90
f = 1.0Mhz
TJ = 175°C, IC = 192A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 10
Ω, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
µs
VCC = 400V, Vp =600V
16, CT3
Rg = 10
Ω, VGE = +15V to 0V
WF2
Conditions


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