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IRGP4068DPBF Datasheet(PDF) 1 Page - International Rectifier

No. de Pieza. IRGP4068DPBF
Descripción  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Descarga  10 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
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IRGP4068DPBF Datasheet(HTML) 1 Page - International Rectifier

 
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068DPbF
IRGP4068D-EPbF
PD - 97250
1
www.irf.com
08/16/06
E
G
n-channel
C
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
GC
E
Gate
Collector
Emitter
TO-247AC
IRGP4068DPbF
TO-247AD
IRGP4068D-EPbF
G C
E
C
G C
E
C
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
96
IC @ TC = 100°C
Continuous Collector Current
48
ICM
Pulse Collector Current
192
ILM
Clamped Inductive Load Current
c
192
A
IF @ TC = 160°C
Diode Continous Forward Current
8.0
IFSM
Diode Non Repetitive Peak Surge Current @ TJ = 25°C d
175
IFM
Diode Peak Repetitive Forward Current
d
16
VGE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
330
W
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
–––
–––
0.45
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
2.0
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––


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