STB120NF10 datasheet(3/15 Pages) STMICROELECTRONICS

No. de pieza	STB120NF10

Descripción Electrónicos	N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STW120NF10 - STP120NF10 - STB120NF10

Electrical ratings

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1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

V

VGS

Gate-source voltage

± 20

V

ID

Drain current (continuous) at TC = 25°C

110

A

ID

Drain current (continuous) at TC=100°C

77

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

440

A

PTOT

Total dissipation at TC = 25°C

312

W

Derating factor

2.08

W/°C

dv/dt (2)

2.

ISD < 120A, di/dt < 300A/µs, VDD = 80%V(BR)DSS

Peak diode recovery voltage slope

10

V/ns

EAS

(3)

3.

Starting Tj = 25°C, ID = 60A, VDD = 50V

Single pulse avalanche energy

550

mJ

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

TL

Maximum lead temperature for soldering purpose

300

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.48

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Número de pieza similar - STB120NF10

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STB120NF10	393Kb / 10P	N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET
STMicroelectronics	STB120NF10	946Kb / 21P	N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET
VBsemi Electronics Co.,...	STB120NF10	969Kb / 7P	N-Channel 100-V (D-S) MOSFET
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STB120NF10 Datasheet(PDF) 3 Page - STMicroelectronics

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