2SJ658

No.7552-1/4

Features

•

Low ON-resistance.

•

High-speed switching.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--2

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

--8

A

Allowable Power Dissipation

PD

0.7

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0

--10

µA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7552

2SJ658

Package Dimensions

unit : mm

2178

[2SJ658]

P-Channel Silicon MOSFET

High-Speed Switching Applications

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

1 : Source

2 : Drain

3 : Gate

SANYO : NP

5.0

4.0

0.5

0.45

0.45

4.0

0.44

1.3

1.3

12

3

31504 TS IM TA-100561