Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
MC908QC4VDSER Datasheet(PDF) 39 Page - Freescale Semiconductor, Inc |
|
MC908QC4VDSER Datasheet(HTML) 39 Page - Freescale Semiconductor, Inc |
39 / 274 page FLASH Memory (FLASH) MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 2 Freescale Semiconductor 39 2.6.4 FLASH Program Operation Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the following step-by-step procedure to program a row of FLASH memory Figure 2-4 shows a flowchart of the programming algorithm. NOTE Do not program any byte in the FLASH more than once after a successful erase operation. Reprogramming bits to a byte which is already programmed is not allowed without first erasing the page in which the byte resides or mass erasing the entire FLASH memory. Programming without first erasing may disturb data stored in the FLASH. 1. Set the PGM bit. This configures the memory for program operation and enables the latching of address and data for programming. 2. Read the FLASH block protect register. 3. Write any data to any FLASH location within the address range desired. 4. Wait for a time, tNVS. 5. Set the HVEN bit. 6. Wait for a time, tPGS. 7. Write data to the FLASH address being programmed(1). 8. Wait for time, tPROG. 9. Repeat step 7 and 8 until all desired bytes within the row are programmed. 10. Clear the PGM bit (1). 11. Wait for time, tNVH. 12. Clear the HVEN bit. 13. After time, tRCV, the memory can be accessed in read mode again. This program sequence is repeated throughout the memory until all data is programmed. NOTE Programming and erasing of FLASH locations cannot be performed by code being executed from the FLASH memory. While these operations must be performed in the order shown, other unrelated operations may occur between the steps. Do not exceed tPROG maximum, see 19.17 Memory Characteristics. 1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing PGM bit, must not exceed the maximum programming time, tPROG maximum. |
Número de pieza similar - MC908QC4VDSER |
|
Descripción similar - MC908QC4VDSER |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |