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BUK104-50SP Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK104-50SP Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voltages V DSS Continuous off-state drain source V IS = 0 V - 50 V voltage 1 V IS Continuous input voltage - 0 11 V V FS Continuous flag voltage - 0 11 V V PS Continuous supply voltage - 0 11 V Currents V IS = - 7 5 V I D Continuous drain current T mb ≤ 25 ˚C - 15 13 A I D Continuous drain current T mb ≤ 100 ˚C - 9.5 8.5 A I DRM Repetitive peak on-state drain current T mb ≤ 25 ˚C - 60 54 A Thermal P tot Total power dissipation T mb = 25 ˚C - 40 W T stg Storage temperature - -55 150 ˚C T j Junction temperature 2 continuous - 150 ˚C T sold Lead temperature during soldering - 250 ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply An n-MOS transistor turns on For internal overload protection to connected, TOPFET can protect between the input and source to remain latched while the control itself from two types of overload - quickly discharge the power circuit is high, external series input over temperature and short circuit MOSFET gate capacitance. resistance must be provided. Refer load. to INPUT CHARACTERISTICS. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V IS =7 5 - V V PSP Protection supply voltage 3 for valid protection BUK104-50L 4.4 4 - V BUK104-50S 5.4 5 - V Over temperature protection V PS = VPSN V DDP(T) Protected drain source supply voltage V IS = 10 V; RI ≥ 2 kΩ -50 V V IS = 5 V; RI ≥ 1 kΩ -50 V Short circuit load protection V PS = VPSN; L ≤ 10 µH V DDP(P) Protected drain source supply voltage 4 V IS = 10 V; RI ≥ 2 kΩ -25 V V IS = 5 V; RI ≥ 1 kΩ -45 V P DSM Instantaneous overload dissipation - 0.8 kW ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The minimum supply voltage required for correct operation of the overload protection circuits. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V DDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. January 1993 2 Rev 1.200 |
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