Philips Semiconductors

Product specification

PowerMOS transistor

BUK104-50L/S

Logic level TOPFET

BUK104-50LP/SP

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Voltages

V

DSS

Continuous off-state drain source

V

-

50

V

voltage

1

V

IS

Continuous input voltage

-

0

11

V

V

FS

Continuous flag voltage

-

0

11

V

V

PS

Continuous supply voltage

-

0

11

V

Currents

V

-

7

5

V

I

D

Continuous drain current

T

-

15

13

A

I

D

Continuous drain current

T

-

9.5

8.5

A

I

DRM

Repetitive peak on-state drain current

T

-

60

54

A

Thermal

P

tot

Total power dissipation

T

-

40

W

T

stg

Storage temperature

-

-55

150

˚C

T

j

Junction temperature

2

continuous

-

150

˚C

T

sold

Lead temperature

during soldering

-

250

˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply

An n-MOS transistor turns on

For internal overload protection to

connected, TOPFET can protect

between the input and source to

remain latched while the control

itself from two types of overload -

quickly discharge the power

circuit is high, external series input

over temperature and short circuit

MOSFET gate capacitance.

resistance must be provided. Refer

load.

to INPUT CHARACTERISTICS.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

5

-

V

V

PSP

Protection supply voltage

3

for valid protection

BUK104-50L

4.4

4

-

V

BUK104-50S

5.4

5

-

V

Over temperature protection

V

V

DDP(T)

Protected drain source supply voltage

V

-50

V

V

-50

V

Short circuit load protection

V

V

DDP(P)

Protected drain source supply voltage

4

V

-25

V

V

-45

V

P

DSM

Instantaneous overload dissipation

-

0.8

kW

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T

3 The minimum supply voltage required for correct operation of the overload protection circuits.

4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V

For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.

January 1993

2

Rev 1.200