BUK110-50GL datasheet(2/11 Pages) PHILIPS

No. de pieza	BUK110-50GL

Descripción Electrónicos	PowerMOS transistor Logic level TOPFET

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK110-50GL

Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Continuous off-state drain source

V

IS = 0 V

-

50

V

voltage

1

V

IS

Continuous input voltage

-

0

6

V

I

D

Continuous drain current

T

mb ≤ 25 ˚C; VIS = 5 V

-

45

A

I

D

Continuous drain current

T

mb ≤ 100 ˚C; VIS = 5 V

-

28

A

I

DRM

Repetitive peak on-state drain current

T

mb ≤ 25 ˚C; VIS = 5 V

-

180

A

P

D

Total power dissipation

T

mb ≤ 25 ˚C

-

125

W

T

stg

Storage temperature

-

-55

150

˚C

T

j

Continuous junction temperature

2

normal operation

-

150

˚C

T

sold

Lead temperature

during soldering

-

250

˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

ISP

Protection supply voltage

3

for valid protection

4

-

V

Over temperature protection

V

DDP(T)

Protected drain source supply voltage

V

IS = 5 V

-

50

V

Short circuit load protection

V

DDP(P)

Protected drain source supply voltage

4

V

IS = 5 V

-

24

V

P

DSM

Instantaneous overload dissipation

T

mb = 25 ˚C

-

2.1

kW

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I

DROM

Repetitive peak clamping current

V

IS = 0 V

-

45

A

E

DSM

Non-repetitive clamping energy

T

mb ≤ 25 ˚C; IDM = 25 A;

-

1

J

V

DD ≤ 25 V; inductive load

E

DRM

Repetitive clamping energy

T

mb ≤ 85 ˚C; IDM = 16 A;

-

80

mJ

V

DD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T

j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 The input voltage for which the overload protection circuits are functional.

4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V

DDP(P) maximum.

For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.

June 1996

2

Rev 1.000

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