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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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2SD2012 Datasheet(PDF) 1 Page - STMicroelectronics |
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2SD2012 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ® INTERNAL SCHEMATIC DIAGRAM October 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 3 A ICM Collector Peak Current (tp < 5 ms) 6 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 25 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink 1500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-220F 1/5 |
Número de pieza similar - 2SD2012_03 |
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Descripción similar - 2SD2012_03 |
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