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STS5DNF20V Datasheet(PDF) 4 Page - STMicroelectronics

No. de Pieza. STS5DNF20V
Descripción  N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET
Descarga  12 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STS5DNF20V Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STS5DNF20V
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS=Max rating,
TC=125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 12V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
0.6
V
RDS(on)
Static drain-source on
resistance
VGS = 4.5V, ID = 2.5A
VGS = 2.7V, ID = 2.5A
0.030
0.037
0.040
0.045
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 .
Forward transconductance
VDS = 15V, ID=2.5 A
10
S
Ciss
Input capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
460
pF
Coss
Output capacitance
200
pF
Crss
Reverse transfer
capacitance
50
pF
Qg
Total gate charge
VDD = 16V, ID = 5A,
VGS = 4.5V
(see Figure 13)
8.5
11.5
nC
Qgs
Gate-source charge
1.8
nC
Qgd
Gate-drain charge
2.4
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=10 V, ID=2.5A,
RG=4.7Ω, VGS= 4.5V
(see Figure 12)
7
33
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 10 V, ID = 2.5A
RG=4.7Ω, VGS = 4.5V
(see Figure 12)
27
10
ns
ns


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