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STS5DNF20V Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STS5DNF20V
Descripción  N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET
Descarga  12 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STS5DNF20V Datasheet(HTML) 5 Page - STMicroelectronics

 
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STS5DNF20V
Electrical characteristics
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Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
5
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
20
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 5A, VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5A, VDD = 10V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 14)
26
13
1
ns
nC
A


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