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1N5406 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza 1N5406
Descripción Electrónicos  Axial?묹ead Standard Recovery Rectifiers
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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1N5406 Datasheet(HTML) 2 Page - ON Semiconductor

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1N5400 thru 1N5408
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
Non−repetitive Peak Reverse Voltage
VRSM
100
200
300
525
800
1000
1200
V
Average Rectified Forward Current
(Single Phase Resistive Load,
1/2 in. Leads, TL = 105°C)
IO
3.0
A
Non−repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions)
IFSM
200 (one cycle)
A
Operating and Storage Junction
Temperature Range
TJ
Tstg
− 65 to +170
− 65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Unit
Thermal Resistance, Junction−to−Ambient (PC Board Mount, 1/2 in. Leads)
RqJA
53
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Forward Voltage (IF = 3.0 Amp, TA = 25°C)
vF
1.0
V
Reverse Current (Rated DC Voltage)
TA = 25°C
TA = 150°C
IR
10
100
mA
Ratings at 25
°C ambient temperature unless otherwise specified.
60 Hz resistive or inductive loads.
For capacitive load, derate current by 20%.


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