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1N5820RLG Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza 1N5820RLG
Descripción Electrónicos  Axial Lead Rectifiers
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

1N5820RLG Datasheet(HTML) 2 Page - ON Semiconductor

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1N5820, 1N5821, 1N5822
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
Non−Repetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1)
VR(equiv) v 0.2 VR(dc), TL = 95°C
(RqJA = 28°C/W, P.C. Board Mounting, see Note 5)
IO
3.0
A
Ambient Temperature
Rated VR(dc), PF(AV) = 0
RqJA = 28°C/W
TA
90
85
80
°C
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
IFSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
TJ, Tstg
65 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS (Note 5)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
28
°C/W
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
TL = 25°C
TL = 100°C
iR
2.0
20
2.0
20
2.0
20
mA
1. Lead Temperature reference is cathode lead 1/32
″ from case.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.


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