© Semiconductor Components Industries, LLC, 2006

July, 2006 − Rev. 10

1

Publication Order Number:

1N5817/D

1N5817, 1N5818, 1N5819

1N5817 and 1N5819 are Preferred Devices

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low−voltage, high−frequency inverters, free wheeling diodes, and

polarity protection diodes.

Features

Mechanical Characteristics:

Leads are Readily Solderable

260

°C Max for 10 Seconds

Human Body Model = 3B (>8000 V)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERE

20, 30 and 40 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information on page 6 of

this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

A

=Assembly Location

1N581x =Device Number

x= 7, 8, or 9

YY

=Year

WW

=Work Week

G

=Pb−Free Package

A

1N581x

YYWW

G

G

(Note: Microdot may be in either location)

AXIAL LEAD

CASE 59

STYLE 1