2N4401RLRMG datasheet(4/7 Pages) ONSEMI

No. de pieza	2N4401RLRMG

Descripción Electrónicos	General Purpose Transistors NPN Silicon

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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2N4401

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Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

10

5.0

7.0

10

20

50

70

100

200

300

500

30

100

200

30

70

50

300

10

20

50

70

100

200

300

500

30

ts′ = ts − 1/8 tf

IB1 = IB2

IC/IB = 10 to 20

VCC = 30 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

6.0

8.0

10

0

4.0

2.0

0.1

2.0 5.0

10

20

50

1.0

0.5

0.2

0.01 0.02 0.05

100

Figure 9. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 150 W

IC = 500 mA, RS = 200 W

IC = 100 mA, RS = 2.0 kW

IC = 50 mA, RS = 4.0 kW

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

100k

50

100 200

500 1.0k 2.0k

5.0k 10k 20k

50k

6.0

8.0

10

0

4.0

2.0

Figure 10. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1.0 kHz

IC = 50 mA

IC = 100 mA

IC = 500 mA

IC = 1.0 mA

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