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BUK438W-800B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK438W-800B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK438W-800A/B Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 7.6 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj 0 20 40 60 80 100 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V = 160 640 0 0.2 0.4 0.6 0.8 1 1.2 VSDS / V IF / A BUK4y8-800 20 15 10 5 0 Tj / C = 150 25 February 1998 5 Rev 1.000 |
Número de pieza similar - BUK438W-800B |
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Descripción similar - BUK438W-800B |
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