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BUK451-100A Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BUK451-100A
Descripción Electrónicos  PowerMOS transistor
Download  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK451-100A Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
3.75
K/W
mounting base
R
th j-a
Thermal resistance junction to
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
100
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS = 100 V; VGS = 0 V; Tj = 25 ˚C
-
1
10
µA
I
DSS
Zero gate voltage drain current
V
DS = 100 V; VGS = 0 V; Tj =125 ˚C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS = ±30 V; VDS = 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 10 V;
BUK451-100A
-
0.75
0.85
resistance
I
D = 2.5 A
BUK451-100B
-
0.90
1.10
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 2.5 A
1.3
1.7
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
160
240
pF
C
oss
Output capacitance
-
45
60
pF
C
rss
Feedback capacitance
-
16
25
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 3 A;
-
4
6
ns
t
r
Turn-on rise time
V
GS = 10 V; RGS = 50 Ω;
-
15
25
ns
t
d off
Turn-off delay time
R
gen = 50 Ω
-
1020ns
t
f
Turn-off fall time
-
10
20
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
3.0
A
current
I
DRM
Pulsed reverse drain current
-
-
-
12
A
V
SD
Diode forward voltage
I
F = 3.0 A ; VGS = 0 V
-
1.1
1.4
V
t
rr
Reverse recovery time
I
F = 3.0 A; -dIF/dt = 100 A/µs;
-
100
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
0.25
-
µC
January 1980


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