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BUK451-100A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK451-100A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 3.75 K/W mounting base R th j-a Thermal resistance junction to - 60 - K/W ambient STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 100 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.1 3.0 4.0 V I DSS Zero gate voltage drain current V DS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 10 V; BUK451-100A - 0.75 0.85 Ω resistance I D = 2.5 A BUK451-100B - 0.90 1.10 Ω DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 2.5 A 1.3 1.7 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 160 240 pF C oss Output capacitance - 45 60 pF C rss Feedback capacitance - 16 25 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 4 6 ns t r Turn-on rise time V GS = 10 V; RGS = 50 Ω; - 15 25 ns t d off Turn-off delay time R gen = 50 Ω - 1020ns t f Turn-off fall time - 10 20 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 3.0 A current I DRM Pulsed reverse drain current - - - 12 A V SD Diode forward voltage I F = 3.0 A ; VGS = 0 V - 1.1 1.4 V t rr Reverse recovery time I F = 3.0 A; -dIF/dt = 100 A/µs; - 100 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.25 - µC January 1980 |
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