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2N5460G Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5460G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 Publication Order Number: 2N5460/D 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain − Gate Voltage VDG 40 Vdc Reverse Gate − Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 350 2.8 mW mW/ °C Junction Temperature Range TJ − 65 to +135 °C Storage Channel Temperature Range Tstg − 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAM TO−92 CASE 29 STYLE 7 1 2 3 Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION http://onsemi.com 2 DRAIN 1 SOURCE 3 GATE 2N 546x AYWW G G 2N546x = Device Code x = 0, 1, or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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