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2N5686 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza 2N5686
Descripción Electrónicos  High?묬urrent Complementary Silicon Power Transistors
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5686 Datasheet(HTML) 2 Page - ON Semiconductor

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2N5684 2N5686
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
80
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
1.0
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
2.0
10
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)
hFE
15
5.0
60
Collector−Emitter Saturation Voltage (Note 2)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 10 Adc)
VCE(sat)
1.0
5.0
Vdc
Base−Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
2.0
Vdc
Base−Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
MHz
Output Capacitance
2N5684
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5686
Cob
2000
1200
pF
Small−Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
15
*Indicates JEDEC Registered Data.
Note 2: Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
1.0
0.5
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.7
0.5
0.2
0.07
0.05
0.02
0.01
0.7 1.0
2.0
3.0
5.0 7.0
10
50
TJ = 25°C
IC/IB = 10
VCC = 30 V
0.03
0.3
30
0.1
20
2N5684 (PNP)
2N5686 (NPN)
tr
td
+2.0 V
0
tr
20ns
−12V
10 to 100 μs
DUTY CYCLE ≈ 2.0%
RB
RL
VCC
−30 V
TO SCOPE
tr ≤ 20 ns
VCC
−30 V
TO SCOPE
tr ≤ 20 ns
RL
RB
+10V
0
−12V
10 to 100 μs
DUTY CYCLE ≈ 2.0%
tr ≤ 20ns
VBB
+4.0 V
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.


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