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2N6344_06 Datasheet(Hoja de datos) 1 Page - ON Semiconductor

No. de Pieza. 2N6344_06
Descripción  Triacs Silicon Bidirectional Thyristors
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
Publication Order Number:
2N6344/D
2N6344
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Features
Blocking Voltage to 800 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
Pb−Free Package is Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
† Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +110°C, Sine Wave
50 to 60 Hz, Gate Open)
2N6344
2N6349
VDRM,
VRRM
600
800
V
†On−State RMS Current (TC = +80°C) Full
Cycle Sine Wave 50 to 60 Hz (TC = +90°C)
IT(RMS)
8.0
4.0
A
†Peak Non−Repetitive Surge Current (One
Full Cycle, Sine Wave 60 Hz, TC = +25°C)
Preceded and followed by rated current
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2s
†Peak Gate Power
(TC = +80°C, Pulse Width = 2 ms)
PGM
20
W
†Average Gate Power
(TC = +80°C, t = 8.3 ms)
PG(AV)
0.5
W
†Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 ms)
IGM
2.0
A
†Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 ms)
VGM
10
V
†Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
2N6344G
AYWW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
2N6344
TO−220AB
500 Units / Box
2N6344G
TO−220AB
(Pb−Free)
500 Units / Box




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