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2N6344_06 Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. 2N6344_06
Descripción  Triacs Silicon Bidirectional Thyristors
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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2N6344
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
†Thermal Resistance, Junction−to−Case
RqJC
2.2
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Sec
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
†Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 100°C
IDRM,
IRRM
10
2.0
mA
mA
ON CHARACTERISTICS
†Peak On−State Voltage
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
VTM
1.3
1.55
V
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W)
Quadrant I: MT2(+), G(+)
Both
Quadrant II: MT2(+), G(−)
2N6349 only
Quadrant III: MT2(−), G(−)
Both
Quadrant IV: MT2(−), G(+)
2N6349 only
†MT2(+), G(+); MT2(−), G(−) TC = −40°C
†MT2(+), G(−); MT2(−), G(+) TC = −40°C
IGT
12
12
20
35
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W)
Quadrant I: MT2(+), G(+)
Both
Quadrant II: MT2(+), G(−)
2N6349 only
Quadrant III: MT2(−), G(−)
Both
Quadrant IV: MT2(−), G(+)
2N6349 only
†MT2(+), G(+); MT2(−), G(−) TC = −40°C
†MT2(+), G(−); MT2(−), G(+) TC = −40°C
VGT
0.9
0.9
1.1
1.4
2.0
2.5
2.0
2.5
2.5
3.0
V
Gate Non−Trigger Voltage (Continuous dc)
(VD = Rated VDRM, RL = 10 k W, TJ = 100°C)
†MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−)
VGD
0.2
V
†Holding Current (VD = 12 Vdc, Gate Open)
TC = 25°C
(Initiating Current =
"200 mA)
*TC = −40°C
IH
6.0
40
75
mA
†Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt
1.5
2.0
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c)
5.0
V/
ms
†Indicates JEDEC Registered Data.




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