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2N6039G Datasheet(PDF) 3 Page - ON Semiconductor |
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2N6039G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 http://onsemi.com 3 Figure 1. Switching Times Test Circuit 4.0 0.04 Figure 2. Switching Times IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.6 0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.4 0.8 PNP NPN tf tr ts td @ VBE(off) = 0 V2 approx +8.0 V V1 approx −12 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25 ms 0 RB 51 D1 +4.0 V VCC −30 V RC TUT ≈ 8.0 k ≈ 60 SCOPE for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C Figure 3. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.02 0.01 SINGLE PULSE 0.1 0.7 0.3 0.07 0.03 0.02 0.03 0.3 3.0 30 300 |
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