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2N6348A Datasheet(PDF) 2 Page - ON Semiconductor |
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2N6348A Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page 2N6344A, 2N6348A, 2N6349A http://onsemi.com 2 MAXIMUM RATINGS Characteristics Symbol Value Unit *Peak Repetitive Off−State Voltage (Note 1) (Gate Open, TJ = −40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344A, 2N6348A 2N6349A VDRM, VRRM 600 800 V *On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80°C) (TC = +95°C) IT(RMS) 12 6.0 A *Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s *Peak Gate Power (TC = +80°C, Pulse Width = 2.0 ms) PGM 20 W *Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 W *Peak Gate Current (Pulse Width = 2.0 ms; TC = +80°C) IGM 2.0 A *Peak Gate Voltage (Pulse Width = 2.0 ms; TC = +80°C) VGM "10 V *Operating Junction Temperature Range TJ −40 to +125 °C *Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 Seconds TL 260 °C ORDERING INFORMATION Device Package Shipping 2N6344A TO−220AB 500 Units / Box 2N6344AG TO−220AB (Pb−Free) 2N6348A TO−220AB 2N6348AG TO−220AB (Pb−Free) 2N6349A TO−220AB 2N6349AG TO−220AB (Pb−Free) |
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