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2N6073BG Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza 2N6073BG
Descripción Electrónicos  Sensitive Gate Triacs Silicon Bidirectional Thyristors
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6073BG Datasheet(HTML) 3 Page - ON Semiconductor

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2N6071A/B Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
10
2
mA
mA
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak)
VTM
2
V
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = −40°C)
VGT
1.4
2.5
V
Gate Non−Trigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = 110°C)
VGD
0.2
V
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current =
"1 Adc)
TJ = −40°C
TJ = 25°C
IH
30
15
mA
Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc)
tgt
1.5
ms
QUADRANT
(Maximum Value)
Type
IGT @ TJ
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
2N6071A
2N6073A
2N6075A
+25
°C
5
5
5
10
−40
°C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25
°C
3
3
3
5
−40
°C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
5
V/
ms
3. Pulse Test: Pulse Width
≤ 2.0 ms, Duty Cycle ≤ 2%.
*Indicates JEDEC Registered Data.
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
−VEE
VEE = 5.0 V
MC7400
14
7
+
510
W
2N6071A
LOAD
4
115 VAC
60 Hz


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