SI9410DY datasheet(1/5 Pages) VISHAY

No. de pieza	SI9410DY

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

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Si9410DY

Vishay Siliconix

Document Number: 70122

S-31060—Rev. M, 26-May-03

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.030 @ VGS = 10 V

7.0

30

0.040 @ VGS = 5 V

6.0

0.050 @ VGS = 4.5 V

5.4

SO-8

N/C

D

SD

GD

5

6

7

8

Top View

D

2

3

D

4

1

D

G

S

D

N-Channel MOSFET

Ordering Information: Si9410DY

Si9410DY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

7.0

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

5.8

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)a

IS

2.8

Maximum Power Dissipationa

TA = 25_C

PD

2.5

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

50

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

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