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BUK456-800B Datasheet(PDF) 1 Page - NXP Semiconductors

No. de pieza BUK456-800B
Descripción Electrónicos  PowerMOS transistor
Download  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK456-800B Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-800A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic envelope.
BUK456
-800A
-800B
The device is intended for use in
V
DS
Drain-source voltage
800
800
V
Switched Mode Power Supplies
I
D
Drain current (DC)
4
3.5
A
(SMPS), motor control, welding,
P
tot
Total power dissipation
125
125
W
DC/DC and AC/DC converters, and
R
DS(ON)
Drain-source on-state
3
4
in general purpose switching
resistance
applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
800
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
800
V
±V
GS
Gate-source voltage
-
-
30
V
-800A
-800B
I
D
Drain current (DC)
T
mb =
25 ˚C
-
4.0
3.5
A
I
D
Drain current (DC)
T
mb = 100 ˚C
-
2.5
2.2
A
I
DM
Drain current (pulse peak value)
T
mb =
25 ˚C
-
16
14
A
P
tot
Total power dissipation
T
mb =
25 ˚C
-
125
W
T
stg
Storage temperature
-
- 55
150
˚C
T
j
Junction Temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
1.0
K/W
mounting base
R
th j-a
Thermal resistance junction to
-
60
-
K/W
ambient
12 3
tab
d
g
s
May 1995
1
Rev 1.200


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