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STD100NH02L-1 Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STD100NH02L-1
Descripción  N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STD100NH02L
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Vspike
(1)
1.
Garanted when external Rg = 4.7
Ω and tf < tfmax.
Drain-source voltage rating
30
V
VDS
Drain-source voltage (VGS = 0)
24
V
VDGR
Drain-gate voltage (RGS = 20KΩ)24
V
VGS
Drain-source voltage
± 20
V
ID
(2)
2.
Value limited by wire bonding.
Drain current (continuous) at TC = 25°C
60
A
ID
(2)
Drain current (continuous) at TC=100°C
60
A
IDM
(3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
240
A
PTOT
Total dissipation at TC = 25°C
100
W
Derating factor
0.67
W/°C
EAS
(4)
4.
Starting TJ = 25
oC, I
D = 30A, VDD = 15V
Single pulse avalanche energy
800
mJ
Tstg
Storage temperature
-55 to 175
°C
TJ
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case Max
1.5
°C/W
RthJA
Thermal resistance junction-ambient Max
100
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
°C




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