Philips Semiconductors

Product specification

PowerMOS transistor

BUK475-200A/B

Isolated version of BUK455-200A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel

enhancement

mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

field-effect power transistor in a

plastic

full-pack

envelope.

The

BUK475

-200A

-200B

device is intended for use in Switched

V

DS

Drain-source voltage

200

200

V

Mode

Power

Supplies

(SMPS),

I

D

Drain current (DC)

7.6

7

A

motor control, welding, DC/DC and

P

tot

Total power dissipation

30

30

W

AC/DC converters, and in general

T

j

Junction temperature

150

150

˚C

purpose switching applications.

R

DS(ON)

Drain-source on-state

0.23

0.28

Ω

resistance

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

200

V

V

DGR

Drain-gate voltage

R

-

200

V

±V

GS

Gate-source voltage

-

-

30

V

-200A

-200B

I

D

Drain current (DC)

T

25 ˚C

-

7.6

7

A

I

D

Drain current (DC)

T

-

4.8

4.4

A

I

DM

Drain current (pulse peak value)

T

25 ˚C

-

30

28

A

P

tot

Total power dissipation

T

25 ˚C

-

30

W

T

stg

Storage temperature

-

- 55

150

˚C

T

j

Junction temperature

-

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

with heatsink compound

-

-

4.17

K/W

heatsink

R

th j-a

Thermal resistance junction to

-

55

-

K/W

ambient

12 3

case

d

g

s

June 1996

1

Rev 1.200