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STGB10NC60KDT4 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STGB10NC60KDT4
Descripción Electrónicos  N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10NC60KDT4 Datasheet(HTML) 5 Page - STMicroelectronics

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STGB10NC60KD - STGP10NC60KD - STGF10NC60KD
Electrical characteristics
5/17
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj=
25°C
(see Figure 19)
17
6
655
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 19)
16.5
6.5
575
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE = 10Ω, VGE =
15V,TJ=25°C
(see Figure 19)
33
72
82
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 19)
60
106
136
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE=15V, Tj=25°C
(see Figure 19)
55
85
140
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE= 15V,
Tj= 125°C
(see Figure 19)
87
162
249
µJ
µJ
µJ


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