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IRF513 Datasheet(Hoja de datos) 1 Page - Harris Corporation

No. de Pieza. IRF513
Descripción  4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
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Fabricante  HARRIS [Harris Corporation]
Página de inicio  http://www.harris.com
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 1 page
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5-1
Semiconductor
Features
• 4.9A, and 5.6A, 80V and 100V
•rDS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17441.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
IRF511
TO-220AB
IRF511
IRF512
TO-220AB
IRF512
IRF513
TO-220AB
IRF513
NOTE: When ordering, include the entire part number.
D
G
S
SOURCE
DRAIN (FLANGE)
DRAIN
GATE
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
File Number
1573.2
IRF510, IRF511,
IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,
N-Channel Power MOSFETs




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