FDS8447 datasheet(4/6 Pages) FAIRCHILD

No. de pieza	FDS8447

Descripción Electrónicos	Single N-Channel PowerTrench MOSFET

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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FDS8447 Rev.B

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4

Figure 7.

0

10

203040

0

2

4

6

8

10

VDD = 30V

VDD = 10V

Qg, GATE CHARGE(nC)

VDD = 20V

Gate Charge Characteristics

Figure 8.

0.1

1

10

1

10

2

10

3

10

4

f = 1MHz

VGS = 0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

40

Capacitance vs Drain to Source Voltage

Figure 9.

0.01

0.1

1

10

100

1

4

7

10

13

16

TJ = 25oC

TJ = 125oC

t

AV, TIME IN AVALANCHE(ms)

Unclamped Inductive Switching

Capability

Figure 10.

25

50

75

100

125

150

0

3

6

9

12

15

RθJA = 50

oC/W

VGS = 4.5V

VGS = 10V

T

A, AMBIENT TEMPERATURE (

oC)

Maximum Continuous Drain Current vs

Ambient Temperature

Figure 11.

0.01

0.1

1

10

100

0.01

0.1

1

10

100

200

10s

100us

1ms

10ms

100ms

1s

DC

VDS, DRAIN to SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

TA = 25OC

Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

1

10

100

1000

V

GS = 10V

SINGLE PULSE

t, PULSE WIDTH (s)

2000

SINGLE PULSE

RθJA = 125°C/W

TA = 25°C

Typical Characteristics T

J = 25°C unless otherwise noted

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