STP12IE95F4 datasheet(3/11 Pages) STMICROELECTRONICS

No. de pieza	STP12IE95F4

Descripción Electrónicos	Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STP12IE95F4

Electrical ratings

3/11

1

Electrical ratings

Table 2.

Thermal data

Table 1.

Absolute maximum rating

Symbol

Parameter

Value

Unit

VCS(SS) Collector-source voltage (VBS = VGS = 0 V)

950

V

VBS(OS) Base-source voltage (IC = 0, VGS = 0 V)

30

V

VSB(OS) Source-base voltage (IC = 0, VGS = 0 V)

17

V

VGS

Gate-source voltage

± 17

V

IC

Collector current

12

A

ICM

Collector peak current (tP < 5ms)

36

A

IB

Base current

5

A

IBM

Base peak current (tP < 5ms)

10

A

Ptot

Total dissipation at Tc = 25°C

21

W

Tstg

Storage temperature

-40 to 150

°C

TJ

Max. operating junction temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case

__max

6

°C/W

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STP12IE95F4 Datasheet(PDF) 3 Page - STMicroelectronics

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