2N6399 datasheet(2/5 Pages) ONSEMI

No. de pieza	2N6399

Descripción Electrónicos	Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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2N6394 Series

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

†Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM, IRRM

−

10

2.0

mA

ON CHARACTERISTICS

†Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak)

VTM

−

1.7

2.2

V

†Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)

IGT

−

5.0

30

mA

† Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)

VGT

−

0.7

1.5

V

Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C)

VGD

0.2

−

V

† Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

IH

−

6.0

50

mA

Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)

tgt

−

1.0

2.0

ms

Turn-Off Time (VD = Rated VDRM)(ITM = 12 A, IR = 12 A)

(ITM = 12 A, IR = 12 A, TJ = 125°C)

tq

−

15

35

−

ms

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Off-State Voltage Exponential

(VD = Rated VDRM, TJ = 125°C)

dv/dt

−

50

−

V/

ms

†Indicates JEDEC Registered Data

2. Pulse Test: Pulse Width

≤ 300 msec, Duty Cycle ≤ 2%.

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

6.0

120

90

100

110

130

60°

α = 30°

0

1.0

2.0

3.0

8.0

α = CONDUCTION ANGLE

IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

α

90°

4.0

5.0

7.0

180°

dc

125

95

105

115

Figure 1. Current Derating

12

0

4.0

8.0

20

TJ ≈ 125°C

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

7.0

0

1.0

2.0

3.0

8.0

α = CONDUCTION ANGLE

α

10

2.0

6.0

18

14

16

4.0

5.0

6.0

60°

α = 30°

90°

180°

dc

Figure 2. Maximum On−State Power Dissipation

Número de pieza similar - 2N6399

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	2N6399	112Kb / 6P	SCRs 12 AMPERES RMS 50 thru 800 VOLTS
ON Semiconductor	2N6399	79Kb / 8P	Silicon Controlled Rectifiers April, 2001 ??Rev. 3
New Jersey Semi-Conduct...	2N6399	153Kb / 1P	CASE TO-220AB
Digitron Semiconductors	2N6399	319Kb / 5P	SILICON CONTROLLED RECTIFIER
Inchange Semiconductor ...	2N6399	211Kb / 2P	isc Thyristors

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Descripción similar - 2N6399

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	2N6400	77Kb / 6P	Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS December, 2004 ??Rev. 3
Motorola, Inc	2N6394	112Kb / 6P	SCRs 12 AMPERES RMS 50 thru 800 VOLTS
ON Semiconductor	2N6402G	114Kb / 7P	SCRs 16 AMPERES RMS 50 thru 800 VOLTS November, 2012 ??Rev. 6
Motorola, Inc	S2800	76Kb / 4P	SCRs 10 AMPERES RMS 50 thru 800 VOLTS
ON Semiconductor	2N6504	63Kb / 7P	Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS February, 2006 ??Rev. 7
Motorola, Inc	MCR8	66Kb / 2P	SCRs 8 AMPERES RMS 400 thru 800 VOLTS
New Jersey Semi-Conduct...	MCR68	128Kb / 2P	SCRs 12 and 25 AMPERES RMS 50 thru 400 VOLTS
ON Semiconductor	MCR225-8FP	87Kb / 6P	ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS August, 2006 ??Rev. 3
Motorola, Inc	C106	98Kb / 4P	SCRs 4 AMPERES RMS 50 thru 600 VOLTS
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