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BUK553-48C Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK553-48C Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 9 page Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DG Drain-gate zener voltage 0.2 < -I G < 0.4 mA; 38 45 54 V -55˚C < T j < 150˚C V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V V GS(ON) Gate voltage V DS = 10 V; ID = 10 A; 2.0 3.1 4.0 V -55˚C < T j < 150˚C I DSS Zero gate voltage drain current V DS = 30 V; VGS = 0 V; Tj =150 ˚C - 0.01 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V; Tj =150 ˚C - 0.1 10 µA R DS(ON) Drain-source on-state V GS = 5 V; ID = 10 A - 65 85 m Ω resistance DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (CL)DSR Drain source clamp voltage R G = 10 kΩ; ID = 10 A; 40 48 58 V (peak value) -55 < T j < 150˚C; Inductive load. g fs Forward transconductance V DS = 25 V; ID = 10 A 7 12 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 550 825 pF C oss Output capacitance - 240 350 pF C rss Feedback capacitance - 100 160 pF t d on Turn-on delay time V DD = 12 V; ID = 5 A; - 3.5 - µs t r Turn-on rise time V GS = 5 V; RG = 10 kΩ; - 22 - µs t d off Turn-off delay time - 16 - µs t f Turn-off fall time - 18 - µs L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 21 A current I DRM Pulsed reverse drain current - - - 84 A V SD Diode forward voltage I F = 21 A ; VGS = 0 V - 1.3 1.7 V August 1994 2 Rev 1.000 |
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