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BUK553-48C Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BUK553-48C
Descripción Electrónicos  PowerMOS transistor Voltage clamped logic level FET
Download  9 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK553-48C Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK553-48C
Voltage clamped logic level FET
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DG
Drain-gate zener voltage
0.2 < -I
G < 0.4 mA;
38
45
54
V
-55˚C < T
j < 150˚C
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
V
GS(ON)
Gate voltage
V
DS = 10 V; ID = 10 A;
2.0
3.1
4.0
V
-55˚C < T
j < 150˚C
I
DSS
Zero gate voltage drain current
V
DS = 30 V; VGS = 0 V; Tj =150 ˚C
-
0.01
1.0
mA
I
GSS
Gate source leakage current
V
GS = ±15 V; VDS = 0 V; Tj =150 ˚C
-
0.1
10
µA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 10 A
-
65
85
m
resistance
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSR
Drain source clamp voltage
R
G = 10 kΩ; ID = 10 A;
40
48
58
V
(peak value)
-55 < T
j < 150˚C; Inductive load.
g
fs
Forward transconductance
V
DS = 25 V; ID = 10 A
7
12
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
550
825
pF
C
oss
Output capacitance
-
240
350
pF
C
rss
Feedback capacitance
-
100
160
pF
t
d on
Turn-on delay time
V
DD = 12 V; ID = 5 A;
-
3.5
-
µs
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 kΩ;
-
22
-
µs
t
d off
Turn-off delay time
-
16
-
µs
t
f
Turn-off fall time
-
18
-
µs
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
21
A
current
I
DRM
Pulsed reverse drain current
-
-
-
84
A
V
SD
Diode forward voltage
I
F = 21 A ; VGS = 0 V
-
1.3
1.7
V
August 1994
2
Rev 1.000


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