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BAS19LT1_07 Datasheet(Hoja de datos) 1 Page - ON Semiconductor

No. de Pieza. BAS19LT1_07
Descripción  High Voltage Switching Diode
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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 1 page
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© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 9
1
Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
120
200
250
Vdc
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
120
200
250
Vdc
Continuous Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Power Dissipation (Note 1)
PD
385
mW
Electrostatic Discharge
ESD
HM < 500
MM < 400
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
HIGH VOLTAGE
SWITCHING DIODE
Preferred devices are recommended choices for future use
and best overall value.
5
CATHODE
1
ANODE
MARKING DIAGRAMS
http://onsemi.com
3
CATHODE
1
ANODE
4
CATHODE
3
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SC−88A (SOT−353)
CASE 419A
SOT−23
SC−88A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
2
3
1
Jx M G
G
x
= P, R, or S
P
= BAS19LT1
R
= BAS20LT1
S
= BAS21LT1 or BAS21DW5T1
M
= Date Code
G
= Pb−Free Package
2
3
Jx M G
G
1
3
3
2
1
4
5
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
(Note: Microdot may be in either location)




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