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BC327-25RL1G Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza BC327-25RL1G
Descripción Electrónicos  Amplifier Transistors PNP Silicon
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BC327-25RL1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
Publication Order Number:
BC327/D
BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−45
Vdc
Collector −Base Voltage
VCES
−50
Vdc
Collector −Emitter Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
625
5.0
mW
mW/
°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BCxx = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
http://onsemi.com
BC
xx
AYWW
G
G
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17


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