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EMC2DXV5T1 Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. EMC2DXV5T1
Descripción  Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Descarga  11 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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EMC2DXV5T1 Datasheet(HTML) 2 Page - ON Semiconductor

 
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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
357 (Note 1)
2.9 (Note 1)
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
350 (Note 1)
°C/W
BOTH JUNCTIONS HEATED
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
500 (Note 1)
4.0 (Note 1)
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
250 (Note 1)
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad
DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES
Transistor 1 − PNP
Transistor 2 − NPN
Device
Marking
R1 (K)
R2 (K)
R1 (K)
R2 (K)
Package
Shipping
EMC2DXV5T1
UC
22
22
22
22
SOT−553*
4000 / Tape & Reel
EMC2DXV5T1G
SOT−553*
EMC2DXV5T5
SOT−553*
8000 / Tape & Reel
EMC2DXV5T5G
SOT−553*
EMC3DXV5T1
U3
10
10
10
10
SOT−553*
4000 / Tape & Reel
EMC3DXV5T1G
SOT−553*
EMC3DXV5T5
SOT−553*
8000 / Tape & Reel
EMC3DXV5T5G
SOT−553*
EMC4DXV5T1
UE
10
47
47
47
SOT−553*
4000 / Tape & Reel
EMC4DXV5T1G
SOT−553*
EMC4DXV5T5
SOT−553*
8000 / Tape & Reel
EMC4DXV5T5G
SOT−553*
EMC5DXV5T1
U5
4.7
10
47
47
SOT−553*
4000 / Tape & Reel
EMC5DXV5T1G
SOT−553*
EMC5DXV5T5
SOT−553*
8000 / Tape & Reel
EMC5DXV5T5G
SOT−553*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
Figure 1. Derating Curve
250
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 833°C/W


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