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BDV64B Datasheet(PDF) 2 Page - ON Semiconductor |
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BDV64B Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BDV65B BDV64B http://onsemi.com 2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO — 1.0 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 0.4 mAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0, TC = 150_C) ICBO — 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 5.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) hFE 1000 — — Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.02 Adc) VCE(sat) — 2.0 Vdc Base−Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.5 Vdc 10K Figure 2. DC Current Gain IC, COLLECTOR CURRENT (A) 0.1 1 1K 4 10 NPN PNP VCE = 4 V IC, COLLECTOR CURRENT (A) 0.1 1 10 Figure 3. DC Current Gain 10K 1K 1 |
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