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BZX84C2V4ET1 Datasheet(PDF) 3 Page - ON Semiconductor

No. de Pieza. BZX84C2V4ET1
Descripción  Zener Voltage Regulators 225 mW SOT-23 Surface Mount
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BZX84C2V4ET1 Datasheet(HTML) 3 Page - ON Semiconductor

   
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BZX84C2V4ET1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ1 (V)
@IZT1 =5 mA
(Note 4)
ZZT1
(
W)
@ IZT1
=
5 mA
VZ2 (V)
@IZT2 =1
mA
(Note 4)
ZZT2
(
W)
@ IZT2
=
1 mA
VZ3 (V)
@IZT3=20 mA
(Note 4)
ZZT3
(
W)
@
IZT3=
20 mA
Max
Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1=5 mA
C (pF)
@
VR = 0
f =
1 MHz
Min
Nom
Max
Min
Max
Min
Max
VR
(V)
IR
mA
@
Min
Max
BZX84C2V4ET1, G
BA1
2.2
2.4
2.6
100
1.7
2.1
600
2.6
3.2
50
50
1.0
−3.5
0
450
BZX84C2V7ET1, G
BA2
2.5
2.7
2.9
100
1.9
2.4
600
3.0
3.6
50
20
1.0
−3.5
0
450
BZX84C3V0ET1, G
BA3
2.8
3.0
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1.0
−3.5
0
450
BZX84C3V3ET1, G
BA4
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5.0
1.0
−3.5
0
450
BZX84C3V6ET1, G
BA5
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5.0
1.0
−3.5
0
450
BZX84C3V9ET1, G
BA6
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3.0
1.0
−3.5
−2.5
450
BZX84C4V3ET1, G
BA7
4.0
4.3
4.6
90
3.3
4.0
600
4.4
5.1
30
3.0
1.0
−3.5
0
450
BZX84C4V7ET1, G
BA9
4.4
4.7
5.0
80
3.7
4.7
500
4.5
5.4
15
3.0
2.0
−3.5
0.2
260
BZX84C5V1ET1, G
BB1
4.8
5.1
5.4
60
4.2
5.3
480
5.0
5.9
15
2.0
2.0
−2.7
1.2
225
BZX84C5V6ET1, G
BB2
5.2
5.6
6.0
40
4.8
6.0
400
5.2
6.3
10
1.0
2.0
−2
2.5
200
BZX84C6V2ET1, G
BB3
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3.0
4.0
0.4
3.7
185
BZX84C6V8ET1, G
BB4
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2.0
4.0
1.2
4.5
155
BZX84C7V5ET1, G
BB5
7.0
7.5
7.9
15
6.9
7.9
80
7.0
8.0
6
1.0
5.0
2.5
5.3
140
BZX84C8V2ET1, G
BB6
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5.0
3.2
6.2
135
BZX84C9V1ET1, G
BB7
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6.0
3.8
7.0
130
BZX84C10ET1, G
BB8
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7.0
4.5
8.0
130
BZX84C11ET1, G
BB9
10.4
11
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8.0
5.4
9.0
130
BZX84C12ET1, G
BC1
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8.0
6.0
10
130
BZX84C13ET1, G
BC2
12.4
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8.0
7.0
11
120
BZX84C15ET1, G
BC3
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13
110
BZX84C16ET1, G
BC4
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14
105
BZX84C18ET1, G
BC5
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16
100
BZX84C20ET1, G
BC6
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18
85
BZX84C22ET1, G
BC7
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20
85
BZX84C24ET1, G
BC8
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22
80
Device
Device
Marking
VZ1 Below
@IZT1 =2 mA
ZZT1
Below
@ IZT1
=
2 mA
VZ2 Below
@IZT2 =
0.1 mA
ZZT2
Below
@ IZT4
=
0.5 mA
VZ3 Below
@IZT3 =10 mA
ZZT3
Below
@ IZT3
=
10 mA
Max
Reverse
Leakage
Current
qVZ
(mV/k)
Below
@ IZT1 = 2
mA
C (pF)
@ VR
= 0
f =
1 MHz
Min
Nom
Max
Min
Max
Min
Max
VR
(V)
IR
mA
@
Min
Max
BZX84C27ET1, G
BC9
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
0.05
18.9
21.4
25.3
70
BZX84C30ET1
BD1
28
30
32
80
27.8
32
300
28.1
32.4
50
0.05
21
24.4
29.4
70
BZX84C33ET1, G
BD2
31
33
35
80
30.8
35
325
31.1
35.4
55
0.05
23.1
27.4
33.4
70
BZX84C36ET1, G
BD3
34
36
38
90
33.8
38
350
34.1
38.4
60
0.05
25.2
30.4
37.4
70
BZX84C39ET1, G
BD4
37
39
41
130
36.7
41
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
BZX84C43ET1, G
BK6
40
43
46
150
39.7
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
BZX84C47ET1, G
BD5
44
47
50
170
43.7
50
375
44.1
50.5
90
0.05
32.9
42
51.8
40
BZX84C51ET1, G
BD6
48
51
54
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
BZX84C56ET1, G
BD7
52
56
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
BZX84C62ET1, G
BD8
58
62
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
BZX84C68ET1, G
BD9
64
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
BZX84C75ET1, G
BE1
70
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
* The “G” suffix indicates Pb−Free package available.


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