MC33151DR2G datasheet(4/12 Pages) ONSEMI

No. de pieza	MC33151DR2G

Descripción Electrónicos	High Speed Dual MOSFET Drivers

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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MC34151, MC33151

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4

VCC = 12 V

Vin = 5 V to 0 V

CL = 1.0 nF

TA = 25°C

Figure 8. Propagation Delay

Figure 9. Drive Output Clamp Voltage

versus Clamp Current

Figure 10. Drive Output Saturation Voltage

versus Load Current

Figure 11. Drive Output Saturation Voltage

versus Temperature

Figure 12. Drive Output Rise Time

Figure 13. Drive Output Fall Time

90%

10%

50 ns/DIV

90%

10%

10 ns/DIV

90%

10%

10 ns/DIV

IO, OUTPUT LOAD CURRENT (A)

High State Clamp

(Drive Output Driven Above VCC)

VCC

GND

Low State Clamp

(Drive Output Driven Below Ground)

VCC = 12 V

80

ms Pulsed Load

120 Hz Rate

TA = 25°C

IO, OUTPUT LOAD CURRENT (A)

Source Saturation

(Load to Ground)

VCC = 12 V

80

ms Pulsed Load

120 Hz Rate

TA = 25°C

VCC

Sink Saturation

(Load to VCC)

GND

TA, AMBIENT TEMPERATURE (°C)

Source Saturation

(Load to Ground)

Sink Saturation

(Load to VCC)

VCC = 12 V

Isource = 400 mA

Isink = 400 mA

VCC

Isource = 10 mA

Isink = 10 mA

GND

Drive Output

Logic Input

VCC = 12 V

Vin = 5 V to 0 V

CL = 1.0 nF

TA = 25°C

VCC = 12 V

Vin = 5 V to 0 V

CL = 1.0 nF

TA = 25°C

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

−55

−25

0

25

50

75

100

125

3.0

2.0

1.0

0

−1.0

0

−1.0

−2.0

−3.0

3.0

2.0

1.0

0

−0.5

−0.7

−0.9

−1.1

1.9

1.7

1.5

1.0

0.8

0.6

0

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MC33151DR2G Datasheet(PDF) 4 Page - ON Semiconductor

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