Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor

BUK866-400 IZ

Protected Logic-Level IGBT

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Protected N-channel logic-level

SYMBOL PARAMETER

MIN. TYP. MAX. UNIT

insulated gate bipolar power

transistor in a plastic envelope

V

(CL)CER

Collector-emitter clamp voltage

350

400

500

V

suitable for surface mount

V

CEsat

Collector-emitter on-state voltage

2.2

V

applications. It is intended for

I

C

Collector current (DC)

20

A

automotive ignition applications, and

P

tot

Total power dissipation

100

W

has integral zener diodes providing

E

CERS

Clamped energy dissipation

300

mJ

active collector voltage clamping and

ESD protection up to 2 kV.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CE

Collecter-emitter voltage

t

-

500

V

V

CE

Collector-emitter voltage

Continuous

-20

50

V

±V

GE

Gate-emitter voltage

-

-

12

V

I

C

Collector current (DC)

T

-

10

A

I

C

Collector current (DC)

T

25 ˚C

-

20

A

I

CM

Collector current (pulsed peak value, T

25 ˚C; t

-

25

A

on-state)

V

I

CLM

Collector current (clamped inductive

1 k

Ω ≤ R

-10

A

load)

E

CERS

Clamped turn-off energy

T

-

300

mJ

(non-repetitive)

see Figs. 23,24

E

CERR

Clamped turn-off energy (repetitive)

T

-

125

mJ

f = 50 Hz; t = 60 min.

E

ECR

Reverse avalanche energy

I

-

5

mJ

(repetitive)

P

tot

Total power dissipation

T

25 ˚C

-

125

W

T

stg

Storage temperature

-

-55

150

˚C

T

j

Operating Junction Temperature

-

-40

150

˚C

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model

-

2

kV

voltage

(100 pF, 1.5 k

Ω)

13

mb

2

c

g

e

December 1996

1

Rev. 1.100