2SC5027E

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-030,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

750

V

Collector-Emitter Voltage

700

V

Collector-Emitter Voltage

7

V

Peak Collector Current

3

A

Collector Current (Pulse)

10

A

Base Current

1.5

A

Power Dissipation

50

W

Junction Temperature

150

℃

Storage Temperature

-40 ~ +150

℃

Note

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

750

V

Collector-Emitter Breakdown Voltage

700

V

Emitter-Base Breakdown Voltage

7

V

Collector-Emitter sustaining Voltage

L=2mH, Clamped

700

V

Collector Cut-off Current

10

μA

Emitter Cut-off Current

10

μA

10

40

DC Current Gain

8

Collector-Emitter Saturation Voltage

2

V

Base-Emitter Saturation Voltage

1.5

V

Output Capacitance

Cob

60

pF

Current Gain Bandwidth Product

15

MHz

Turn ON Time

0.5

μs

Storage Time

3

μs

Fall Time

0.3

μs

CLASSIFICATION

N

R

O

RANGE

10 ~ 20

15 ~ 30

20 ~ 40