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BUK9606-30 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK9606-30 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK9606-30 Logic level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 75 A; VDD ≤ 15 V; - - 500 mJ unclamped inductive turn-off V GS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C energy December 1997 3 Rev 1.100 |
Número de pieza similar - BUK9606-30 |
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Descripción similar - BUK9606-30 |
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