UTC2N3773/2N6099

POWER TRANSISTOR

1

QW-R205-001,A

COMPLEMENTARY SILICON

TRANSISTORS

The 2N3773/2N6099 are power-base power transistors

designed for high power audio, disk head positions and

other linear applications. These device can be used in

power switching circuits such as relay or solened drivers,

DC to DC converters or inverts.

FEATURES

*High safe operating area(100 tested)

150W and 100V

*Complement Characterized for linear operation

*High DC Current Gain and low saturation voltage

Hfe=15(8A 4V)

Vce(sat)=1.4V(Ic=8A,Ib=0.8A)

*For Low Distortion Complementary Designs

TO-3

PARAMETERS

SYMBOL

VALUE

UNITS

Collector-base voltage

160

V

Collector-emitter voltage

140

V

Emitter-base voltage

7

V

Collector-emitter voltage

160

V

Total Power dissipation

Tc=25

°C

Dertate above 25

°C

Pc

150

0.855

W

W/

°C

Collector current

continuous

Peak

Ic

16

30

A

A

Base current

continuous

Peak

4

15

A

A

Thermal resistance Junction to Case

R

1.17

°C/W

Storage Temperature

-65 ~ +200

°C